X-band SiGe monolithic control circuits

This paper reports the performances of several X-band silicon-germanium (SiGe) monolithic microwave integrated circuits (MMICs) including multi-throw switches and attenuators designed using an optimized vertical PIN diode currently offered by IBM SiGe foundry process.

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Bibliographic Details
Published in1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.98EX271) pp. 126 - 134
Main Authors Tayrani, R., Sakamoto, G., Chan, P., Van Leeuwen, R., Nguyen, T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1998
Subjects
Attenuators
Design optimization
Foundries
Germanium silicon alloys
Microwave integrated circuits
MMICs
Monolithic integrated circuits
Silicon germanium
Switches
Switching circuits
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Summary:This paper reports the performances of several X-band silicon-germanium (SiGe) monolithic microwave integrated circuits (MMICs) including multi-throw switches and attenuators designed using an optimized vertical PIN diode currently offered by IBM SiGe foundry process.
ISBN:0780352882
9780780352889
DOI:10.1109/SMIC.1998.750207