Extracting F-N stress-induced interface states in SOI NMOSFETs by forward gated-diode

• Published in: 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Vol. 2; pp. 946 - 949 vol.2
• Main Authors: Jin He, Xing Zhang, Aihua Huang, Ru Huang, Yangyuan Wang
• Format: Conference Proceeding
• Language: English
• Published: IEEE 2001
• Subjects: Density measurement; Diodes; Interface states; Monitoring; MOSFET circuits; Power measurement; Roentgenium; Stress measurement; Time measurement; Voltage

The forward gated-diode R-G current method has been used to monitor the F-N stressing-induced interface traps in NMOSFET/SOI in this paper. This simple and accurate experimental method can directly give the interface trap density induced by F-N stressing effect for characterizing the device's r...