Extracting F-N stress-induced interface states in SOI NMOSFETs by forward gated-diode

The forward gated-diode R-G current method has been used to monitor the F-N stressing-induced interface traps in NMOSFET/SOI in this paper. This simple and accurate experimental method can directly give the interface trap density induced by F-N stressing effect for characterizing the device's r...

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Bibliographic Details
Published in2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Vol. 2; pp. 946 - 949 vol.2
Main Authors Jin He, Xing Zhang, Aihua Huang, Ru Huang, Yangyuan Wang
Format Conference Proceeding
LanguageEnglish
Published IEEE 2001
Subjects
Density measurement
Diodes
Interface states
Monitoring
MOSFET circuits
Power measurement
Roentgenium
Stress measurement
Time measurement
Voltage
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Summary:The forward gated-diode R-G current method has been used to monitor the F-N stressing-induced interface traps in NMOSFET/SOI in this paper. This simple and accurate experimental method can directly give the interface trap density induced by F-N stressing effect for characterizing the device's reliability characteristics. For the measured NMOS/SOI device with a body structure, an expected power law relationship as /spl Delta/N/sub ii/ /spl sim/t/sup 0.4/ between the pure F-N stressing-induced interface trap density and the accumulated stressing time is obtained.
ISBN:0780365208
9780780365209
DOI:10.1109/ICSICT.2001.982051