Deep center defects in AlGaAs/GaAs grin-sch sqw lasers fabricated by MBE and MOCVD

The deep center traps of AlGaAs/GaAs GRIN-SCH SQW lasers fabricated by MBE and MOCVD have been studied using DLTS (Deep Level Transient Spectroscopy) technique.The DLTS spectra show that deep (electron and hole) traps, having larger capture cross sections and concentrations, are observed in n-AlGaAs...

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Bibliographic Details
Published inInternational Electron Devices and Materials Symposium p. 11
Main Authors Lu Liwu, Zhou Jie, Feng Songlin
Format Conference Proceeding
LanguageEnglish
Published IEEE 1994
Subjects
Electron traps
Epitaxial layers
Gallium arsenide
MOCVD
Molecular beam epitaxial growth
Semiconductor lasers
Spectroscopy
Substrates
Temperature distribution
Temperature sensors
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Summary:The deep center traps of AlGaAs/GaAs GRIN-SCH SQW lasers fabricated by MBE and MOCVD have been studied using DLTS (Deep Level Transient Spectroscopy) technique.The DLTS spectra show that deep (electron and hole) traps, having larger capture cross sections and concentrations, are observed in n-AlGaAs layers of lasers in addition to the well-known DX center. For the MBE lasers, deep hole trap H1 may spatially localize in the interfacial regions of discontinous variation A1 mole fraction of n AlGaAs layers with X/sub AI/=0.20 /spl rarr/0.43 and X/sub AI=0.43/, and deep electron trap E3 may spatially localize in interfacial regions of discontinous variation Al mole fraction of n AlGaAs layer with X/sub AI=0.43/.For the MOCVD lasers,deep electron trap E3 may spatially localize in n-AlGaAs layers with X/sub Al/=0.18 /spl rarr/0.30 and X/sub AI/=0.30 and DX center may spatially localize in the interfacial regions of discontinous variation Al mole fraction of n-AlGaAs layers with X/sub AI/=0.18 /spl rarr/0.30 mid X/sub AI/=0.30.
DOI:10.1109/EDMS.1994.863856