Channel Coupling and Edge Effect Imposed Trade-offs on Fully-Depleted (FD) SOI MOSFET's

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Bibliographic Details
Published in28th European Solid-State Device Research Conference pp. 616 - 619
Main Authors Ioannou, D.E., Duan, F.L., Jenkins, W.C., Hughes, H.L.
Format Conference Proceeding
LanguageEnglish
Published Editions Frontieres 1998
Subjects
Degradation
Doping profiles
Hot carriers
Impact ionization
MOSFET circuits
Numerical simulation
Semiconductor films
Silicon
Substrates
Voltage
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ISBN:9782863322345
2863322346