Improved performance of InGaAsN/GaAs lasers with low temperature grown quantum well by MOCVD

This paper presents the lasing properties of InGaAsN/GaAs lasers with a low temperature and high temperature grown quantum well (QW) by metal-organic chemical vapor deposition. The lasing wavelength, threshold current densities and characteristic temperature of both QW lasers are characterized and c...

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Published inConference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) pp. 257 - 260
Main Authors Yeh, N.-T., Wu, B.-R., Ho, W.-J., Chyi, J.-I.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2002
Subjects
Chemical lasers
Conducting materials
Gallium arsenide
MOCVD
Quantum well lasers
Surface emitting lasers
Temperature
Threshold current
Vertical cavity surface emitting lasers
Waveguide lasers
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Summary:This paper presents the lasing properties of InGaAsN/GaAs lasers with a low temperature and high temperature grown quantum well (QW) by metal-organic chemical vapor deposition. The lasing wavelength, threshold current densities and characteristic temperature of both QW lasers are characterized and correlated with the photoluminescence spectra. These results show the quality improvement of the lasers with a low growth temperature grown QW. 1.27 /spl mu/m InGaAsN/GaAs edge emitting QW lasers with low threshold current density of 1.5 kA/cm/sup 2/ and high characteristics temperature of 115 K are demonstrated.
ISBN:9780780373204
0780373200
ISSN:1092-8669
DOI:10.1109/ICIPRM.2002.1014353