Low turn-off switching energy 1200 V IGBT module
A new 5th generation IGBT module with low turn-off energy has been developed. The module utilizes IGBT chips optimized for high frequency industrial power supplies in applications such as X-ray, MRI (magnetic resonance imaging), and induction heating. This technology is designed to provide a simplif...
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Published in | Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344) Vol. 3; pp. 2165 - 2169 vol.3 |
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Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
2002
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Subjects | |
Online Access | Get full text |
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Summary: | A new 5th generation IGBT module with low turn-off energy has been developed. The module utilizes IGBT chips optimized for high frequency industrial power supplies in applications such as X-ray, MRI (magnetic resonance imaging), and induction heating. This technology is designed to provide a simplified cost effective alternative to parallel discrete MOSFETs in these applications. |
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ISBN: | 0780374207 9780780374201 |
ISSN: | 0197-2618 2576-702X |
DOI: | 10.1109/IAS.2002.1043831 |