Low turn-off switching energy 1200 V IGBT module

A new 5th generation IGBT module with low turn-off energy has been developed. The module utilizes IGBT chips optimized for high frequency industrial power supplies in applications such as X-ray, MRI (magnetic resonance imaging), and induction heating. This technology is designed to provide a simplif...

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Bibliographic Details
Published inConference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344) Vol. 3; pp. 2165 - 2169 vol.3
Main Authors Yamada, J., Yu, Y., Ishimura, Y., Donlon, J.F., Motto, E.R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2002
Subjects
Frequency
Inductance
Induction generators
Insulated gate bipolar transistors
Magnetic resonance imaging
MOSFETs
Packaging
Power generation
Switching loss
Voltage
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Summary:A new 5th generation IGBT module with low turn-off energy has been developed. The module utilizes IGBT chips optimized for high frequency industrial power supplies in applications such as X-ray, MRI (magnetic resonance imaging), and induction heating. This technology is designed to provide a simplified cost effective alternative to parallel discrete MOSFETs in these applications.
ISBN:0780374207
9780780374201
ISSN:0197-2618
2576-702X
DOI:10.1109/IAS.2002.1043831