GaAs MESFET Oscillator Design Using Large-Signal S-Parameters

A novel analytical technique is presented which uniquely determines the embedding network required for a MESFET oscillator to deliver specified power to an arbitrary load. An experimental 5.3 GHz oscillator provided 24 dBm with 35% efficiency.

Saved in:
Bibliographic Details
Published in1983 IEEE MTT-S International Microwave Symposium Digest pp. 279 - 281
Main Authors Gilmore, R.J., Rosenbaum, F.J.
Format Conference Proceeding
LanguageEnglish
Published 1983
Subjects
Circuit stability
Circuit topology
FETs
Frequency
Gallium arsenide
Impedance
MESFETs
Oscillators
Scattering parameters
Voltage
Online AccessGet full text

Cover

Abstract A novel analytical technique is presented which uniquely determines the embedding network required for a MESFET oscillator to deliver specified power to an arbitrary load. An experimental 5.3 GHz oscillator provided 24 dBm with 35% efficiency.
AbstractList A novel analytical technique is presented which uniquely determines the embedding network required for a MESFET oscillator to deliver specified power to an arbitrary load. An experimental 5.3 GHz oscillator provided 24 dBm with 35% efficiency.
Author Rosenbaum, F.J.
Gilmore, R.J.
Author_xml – sequence: 1
  givenname: R.J.
  surname: Gilmore
  fullname: Gilmore, R.J.
– sequence: 2
  givenname: F.J.
  surname: Rosenbaum
  fullname: Rosenbaum, F.J.
BookMark eNotj8tKw0AYhQdpwbT6ArqZF5g6l8xt4aLUtgoJFVJRV2WS_BNG0lRmuvHtjdjVOedbfHBmaDKcBkDojtEFY9Q-lO_VZ7lg1ohxC2pMfoUyLrUimjM1QRlluSUqlx9TlGn91xiX12iW0helVBqmMvS4dcuEy3W1We_xLjWh7935FPETpNAN-C2FocOFix2QagSuxxV5ddEd4Qwx3aCpd32C20vO0X70rJ5Jsdu-rJYFCcaciaKqzqmXlLUchPF1rXPGofEaZAsK6hGKVhujvGmt8g21zFLfGGi0ZrwVc3T_rw0AcPiO4ejiz-FyWvwCSgpKfQ
ContentType Conference Proceeding
DBID 6IE
6IL
CBEJK
RIE
RIL
DOI 10.1109/MWSYM.1983.1130884
DatabaseName IEEE Electronic Library (IEL) Conference Proceedings
IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume
IEEE Xplore All Conference Proceedings
IEEE/IET Electronic Library (IEL)
IEEE Proceedings Order Plans (POP All) 1998-Present
DatabaseTitleList
Database_xml – sequence: 1
  dbid: RIE
  name: IEEE Xplore Digital Library
  url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/
  sourceTypes: Publisher
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISSN 2576-7216
EndPage 281
ExternalDocumentID 1130884
Genre orig-research
GroupedDBID -~X
29I
6IE
6IF
6IH
6IK
6IL
6IM
6IN
AAJGR
ABPPZ
ACGFS
ADZIZ
AFFNX
AI.
ALMA_UNASSIGNED_HOLDINGS
BEFXN
BFFAM
BGNUA
BKEBE
BPEOZ
CBEJK
CHZPO
IPLJI
JC5
M43
OCL
RIE
RIG
RIL
RNS
VH1
ID FETCH-LOGICAL-i88t-606b40f501d2e38fbb7412ecf7e5de6ebe383d7886f8d96fc09190fc8ec7712d3
IEDL.DBID RIE
ISSN 0149-645X
IngestDate Wed Jun 26 19:18:39 EDT 2024
IsPeerReviewed false
IsScholarly true
LCCN 77-645125
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-i88t-606b40f501d2e38fbb7412ecf7e5de6ebe383d7886f8d96fc09190fc8ec7712d3
PageCount 3
ParticipantIDs ieee_primary_1130884
PublicationCentury 1900
PublicationDate 19830000
PublicationDateYYYYMMDD 1983-01-01
PublicationDate_xml – year: 1983
  text: 19830000
PublicationDecade 1980
PublicationTitle 1983 IEEE MTT-S International Microwave Symposium Digest
PublicationTitleAbbrev MWSYM
PublicationYear 1983
SSID ssj0005816
Score 1.2528434
Snippet A novel analytical technique is presented which uniquely determines the embedding network required for a MESFET oscillator to deliver specified power to an...
SourceID ieee
SourceType Publisher
StartPage 279
SubjectTerms Circuit stability
Circuit topology
FETs
Frequency
Gallium arsenide
Impedance
MESFETs
Oscillators
Scattering parameters
Voltage
Title GaAs MESFET Oscillator Design Using Large-Signal S-Parameters
URI https://ieeexplore.ieee.org/document/1130884
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV07T8MwELbaTrDwaBFveWDEaR6O4wwMCFoqRKBSiihTFdtnCYFaBOnCr-ectOUhBrbIUizLF-W7z_6-O0JOuAbFY8tZmhqfccE1U7EApm2C6CZCbcGZk7NbMbjn1-N43CCnKy8MAFTiM_DcY3WXb2Z67o7KugH-cKXkTdKUflh7tb7kHLJqc-oyfiZ4PF4aZPy0mz3kj5mH7DryFjP8aKVSIUl_g2TLNdQCkmdvXipPf_wqz_jfRW6Szpdnjw5XaLRFGjDdJuvfyg22ydlVcf5Os17e743oHWIffgJIuellpeKglXqA3jhpOMtxoHihORsWTr3lSnB2yAjfuxiwRfsE9iRlyZCZKO7b2A9MCJG0SmHyEAIGAWIDAoOH5NQgAxZWmlRYjZlD6lstQSdJEJpoh7SmsynsEmok5uACmVlkIp5IkRqwvlVBJFzXjCLaI223D5PXukDGZLEF-38PH5A1F4v6HOOQtMq3ORwhspfquArpJ2nboK4
link.rule.ids 310,311,786,790,795,796,802,4069,4070,23958,23959,25170,27956,55107
linkProvider IEEE
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV09T8MwELVKGYCFjxbxTQZGnObDcZyBAUFLgaZUShFlqmr7LCFQiyBd-PWck9ICYmCLLMWyfFHePfu9O0JOmALJIsNokmiPMs4UlREHqkyM6MYDZcCak9Mub9-zm0E0qJDTuRcGAArxGbj2sbjL1xM1tUdlDR9_uEKwJbKMOO_FpVtrIegQRaNTm_NTzqLBl0XGSxrpQ_aYusivQ3c2x49mKgWWtNZJ-rWKUkLy7E5z6aqPXwUa_7vMDVJfuPac3hyPNkkFxltk7VvBwRo5uxqdvztpM2s1-84doh9-BEi6nctCx-EU-gGnY8XhNMOB0YuT0d7I6rdsEc466eN7F206a6BAn4TIKXITyTwTeb4OIBRGSkwfAsAwQKSBY_iQnmrkwNwInXCjMHdIPKMEqDj2Ax1uk-p4MoYd4miBWThHbhbqkMWCJxqMZ6Qfcts3YxTukprdh-FrWSJjONuCvb-Hj8lKu592hp3r7u0-WbVxKU81Dkg1f5vCIeJ8Lo-K8H4CFnOkAg
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=proceeding&rft.title=1983+IEEE+MTT-S+International+Microwave+Symposium+Digest&rft.atitle=GaAs+MESFET+Oscillator+Design+Using+Large-Signal+S-Parameters&rft.au=Gilmore%2C+R.J.&rft.au=Rosenbaum%2C+F.J.&rft.date=1983-01-01&rft.issn=0149-645X&rft.eissn=2576-7216&rft.spage=279&rft.epage=281&rft_id=info:doi/10.1109%2FMWSYM.1983.1130884&rft.externalDocID=1130884
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0149-645X&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0149-645X&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0149-645X&client=summon