GaAs MESFET Oscillator Design Using Large-Signal S-Parameters

A novel analytical technique is presented which uniquely determines the embedding network required for a MESFET oscillator to deliver specified power to an arbitrary load. An experimental 5.3 GHz oscillator provided 24 dBm with 35% efficiency.

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Bibliographic Details
Published in1983 IEEE MTT-S International Microwave Symposium Digest pp. 279 - 281
Main Authors Gilmore, R.J., Rosenbaum, F.J.
Format Conference Proceeding
LanguageEnglish
Published 1983
Subjects
Circuit stability
Circuit topology
FETs
Frequency
Gallium arsenide
Impedance
MESFETs
Oscillators
Scattering parameters
Voltage
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Summary:A novel analytical technique is presented which uniquely determines the embedding network required for a MESFET oscillator to deliver specified power to an arbitrary load. An experimental 5.3 GHz oscillator provided 24 dBm with 35% efficiency.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1983.1130884