3W, Q Band Solid State Amplifier

The design of Q band IMPATT diode cavity combiners is discussed. The design is based on a three-step closed form algorithm. The first step is the characterization of the passive circuit (cavity and diode package) using an automatic network analyzer. In the second step, a computer program is used to...

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Bibliographic Details
Published in1983 IEEE MTT-S International Microwave Symposium Digest pp. 481 - 483
Main Authors Jerinic, G., Fines, J., Schindler, M.
Format Conference Proceeding
LanguageEnglish
Published 1983
Subjects
Algorithm design and analysis
Circuit synthesis
Diodes
Gallium arsenide
Injection-locked oscillators
Network synthesis
Operational amplifiers
Packaging
Passive circuits
Solid state circuits
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Summary:The design of Q band IMPATT diode cavity combiners is discussed. The design is based on a three-step closed form algorithm. The first step is the characterization of the passive circuit (cavity and diode package) using an automatic network analyzer. In the second step, a computer program is used to generate diode device lines. The third step is the load line synthesis for predictable operation as either an injection-locked oscillator or a stable negative resistance amplifier. These procedures were used to design a three-diode, two-stage amplifier using 2-watt, 44-GHz GaAs IMPATT diodes. An output power of 3 watts with 11 dB gain was achieved.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1983.1130954