Stacked Heterostructure Barrier Varactors on InP for Millimeter Wave Triplers

Single-barrier varactors reported earlier were limited in their power output. By using a pseudomorphic In 0.52 Al 0.48 As/AlAs/In 0.52 Al 0.48 As barrier with good current blocking characteristics and stacking three varactor layers by MBE technique, we report the first symmetric stacked varactor on...

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Bibliographic Details
Published in1994 24th European Microwave Conference Vol. 1; pp. 758 - 763
Main Authors Krishnamurthi, Kathiravan, Harrison, Robert G., Rogers, Chris, Ovey, John, Nilsen, Svein M., Missous, Mohammed
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.1994
Subjects
Electrical resistance measurement
Epitaxial layers
Indium compounds
Indium gallium arsenide
Indium phosphide
Molecular beam epitaxial growth
Packaging
Substrates
Varactors
Wet etching
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Summary:Single-barrier varactors reported earlier were limited in their power output. By using a pseudomorphic In 0.52 Al 0.48 As/AlAs/In 0.52 Al 0.48 As barrier with good current blocking characteristics and stacking three varactor layers by MBE technique, we report the first symmetric stacked varactor on InP with low leakage, high breakdown voltage (≈ 14V) and 50 mW power output capability at 39 GHz, 20 mW at 186 GHz.
DOI:10.1109/EUMA.1994.337302