Optimization of the processing parameters for pulsed laser deposition of ZnO thin films

Summary form only given, as follows. Pulsed laser deposition (PLD) is a rapid, efficient and versatile technique for fabrication of thin films with an atomistic control of the composition. Recently, much effort has been paid to employ PLD for the growth of wide band-gap semiconductor films and heter...

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Published inThe 30th International Conference on Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts p. 311
Main Authors Liu, Z.F., Shan, F.K., Li, Y.X., Yu, Y.S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2003
Subjects
Atom lasers
Optical films
Optical pulses
Plasma temperature
Pulsed laser deposition
Semiconductor films
Semiconductor lasers
Semiconductor thin films
Sputtering
Zinc oxide
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Summary:Summary form only given, as follows. Pulsed laser deposition (PLD) is a rapid, efficient and versatile technique for fabrication of thin films with an atomistic control of the composition. Recently, much effort has been paid to employ PLD for the growth of wide band-gap semiconductor films and heterostuctures The present work describes the pulsed laser deposition of ZnO thin films. The effects of background oxygen pressure on the structural and optical properties of ZnO films have been investigated systemically. It is found that the velocity distribution of droplet and particulate in the plasma plume changes with increasing background oxygen pressure, and at the same time, the dominant growth mechanism of thin films changes. The effects of substrate temperature and pulse repetition rate on the properties of ZnO are discussed. The optimal processing parameters for this study have been found.
ISBN:9780780379114
078037911X
ISSN:0730-9244
2576-7208
DOI:10.1109/PLASMA.2003.1228888