Field-Effect Transistors: A Cofacially Stacked Electron-Deficient Small Molecule with a High Electron Mobility of over 10 cm2 V−1 s−1 in Air (Adv. Mater. 48/2015)

• Published in: Advanced materials (Weinheim) Vol. 27; no. 48; p. 8120
• Main Authors: Dou, Jin-Hu, Zheng, Yu-Qing, Yao, Ze-Fan, Lei, Ting, Shen, Xingxing, Luo, Xu-Yi, Yu, Zhi-Ao, Zhang, Shi-Ding, Han, Guangchao, Wang, Zhi, Yi, Yuanping, Wang, Jie-Yu, Pei, Jian
• Format: Journal Article
• Language: English
• Published: Blackwell Publishing Ltd 22.12.2015
• Subjects: ambient stability; field-effect transistors; molecular packing; n-type organic semiconductors; organic single crystals
• ISSN: 0935-9648; 1521-4095
• DOI: 10.1002/adma.201570334

Compared with abundant p‐type organic semiconductors with high mobilities, n‐type semiconductors with mobilities over 1 cm2 V−1 s−1 are rare. On page 8051, Y. Yi, J. Pei, and co‐workers report a new small molecule, F4‐BDOPV, with unprecedentedly high electron mobilities of up to 12.6 cm2 V−1 s−1. This is the first time that air‐stable n‐type organic semiconductors have shown mobilities surpassing 10 cm2 V−1 s−1, an important benchmark for practical applications.