A 1.3 mu m InGaAsP ridge waveguide laser on GaAs and silicon substrates thin-film transfer

• Published in: [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials pp. 272 - 275
• Main Authors: Shieh, C.L., Chi, J.Y., Armiento, C.A., Haugsjaa, P.O., Negri, A., Rothman, M., Wang, W.I.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1991
• Subjects: Gallium arsenide; Optical films; Optical materials; Optical waveguides; Semiconductor films; Semiconductor lasers; Semiconductor materials; Silicon; Substrates; Waveguide lasers
• ISBN: 0879426268; 9780879426262
• DOI: 10.1109/ICIPRM.1991.147351

A technique that makes it possible to transfer semiconductor epitaxial films from a lattice-matched growth substrate to a host substrate of a different material is discussed. The transfer of epitaxial films allows materials with different lattice constants to be bonded together without generating a substantial number of defects in regions that are critical to device operation. The thin-film transfer process utilizes metallic solder as an interface between the transferred semiconductor layers and the host substrate. In this transfer process. the film is rigidly supported at all times during transfer, providing the potential for defect-free large-area films. The fabrication of InGaAsP lasers on both GaAs and Si substrates is described. Measurements of the optical characteristics of the lasers show threshold currents comparable to those of conventional lasers.< >