Characteristics and analysis of a-Si:H color-sensitive photodetectors

A novel a-Si:H photodetector has been demonstrated. The advantages of this photodetector include a voltage-adjustable sensitive-wavelength range, which has been confirmed by simulation results, and a lower sub-peak spectral response. The performances of the successfully fabricated a-Si:H color-sensi...

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Published inTRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers pp. 279 - 281
Main Authors Jyh-Wong Hong, Nerng-Fu Shin, Yean-Fen Wu, Tean-Sen Jen, Chun-Yen Chang
Format Conference Proceeding
LanguageEnglish
Published IEEE 1991
Subjects
Charge carrier processes
Chemicals
Cleaning
Fabrication
Glass
Indium tin oxide
Photodetectors
Plasma chemistry
Plasma devices
Voltage
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Summary:A novel a-Si:H photodetector has been demonstrated. The advantages of this photodetector include a voltage-adjustable sensitive-wavelength range, which has been confirmed by simulation results, and a lower sub-peak spectral response. The performances of the successfully fabricated a-Si:H color-sensitive photodetectors, processing a minimum FWHM (full width at half maximum) of 600 AA in its spectral responses and with the basic structure of Al/n/sup +/-i-p/sup +/-i-n-i-p-i-n/sup +//ITO(indium tin oxide)/glass, have been quantitatively fitted by the theoretical analysis. The simple model presented can be used to explain the color-sensitive features observed experimentally for the proposed photodetectors.< >
ISBN:9780879425852
0879425857
DOI:10.1109/SENSOR.1991.148861