A highly compact, wideband GaAs HEMT X-Ku band image-reject receiver MMIC

A fully integrated MMIC (monolithic microwave integrated circuit) receiver was designed and fabricated using 0.2- mu m pseudomorphic InGaAs/GaAs HEMT (high electron mobility transistor) process technology. This MMIC receiver incorporates a single-stage RF amplifier, a two-stage balanced LO amplifier...

Full description

Saved in:
Bibliographic Details
Published in1993 IEEE MTT-S International Microwave Symposium Digest pp. 149 - 152 vol.1
Main Authors Katz, R., Aust, M.V., Kasody, R., Wang, H., Allen, B., Dow, G.S., Tan, K., Lin, S., Myers, R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1993
Subjects
Gallium arsenide
HEMTs
Indium gallium arsenide
Microwave integrated circuits
MMICs
MODFETs
Monolithic integrated circuits
Radiofrequency amplifiers
Switches
Wideband
Online AccessGet full text

Cover

More Information
Summary:A fully integrated MMIC (monolithic microwave integrated circuit) receiver was designed and fabricated using 0.2- mu m pseudomorphic InGaAs/GaAs HEMT (high electron mobility transistor) process technology. This MMIC receiver incorporates a single-stage RF amplifier, a two-stage balanced LO amplifier, a single-stage IF amplifier, an IF switch, and an image-reject diode mixer. Results for these receiver chips showed good conversion gain and image rejection in a single small chip over multioctave frequencies. This chip operates from a single +5 Vdc source and draws 280 mA. Total chip size is 5.5 mm*4.5 mm.< >
ISBN:9780780312098
0780312090
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1993.276922