A multilevel analog storage memory using source-side injection flash array

A multilevel storage technology with resolution approaching 8-bits is developed for storing analog signals directly into a memory array of source-side injection flash EEPROM. This is achieved by devising a read and programming scheme, by optimizing a memory cell layout, and by integrating mixed-mode...

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Bibliographic Details
Published in1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) pp. 187 - 190
Main Authors Chun-Mai Liu, Brennan, J., Ping Guo, Holzmann, P., Klinger, P., Kordesch, A.V., Ming Kwan, I-Sheng Liu, Ken Su, Chih-Hsin Wang, Hai Wang, Sukyoon Yoon
Format Conference Proceeding
LanguageEnglish
Published IEEE 1999
Subjects
Analog memory
Array signal processing
Costs
Current measurement
EPROM
Flash memory
Nonvolatile memory
Robustness
Signal resolution
Threshold voltage
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Summary:A multilevel storage technology with resolution approaching 8-bits is developed for storing analog signals directly into a memory array of source-side injection flash EEPROM. This is achieved by devising a read and programming scheme, by optimizing a memory cell layout, and by integrating mixed-mode capabilities into the base digital flash process.
ISBN:9780780356207
0780356209
ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.1999.786031