RF package characterization and modeling

This paper presents the characterization and modeling of package parasitics of power MOSFETs used in RF applications. A detailed characterization procedure of electrical and thermal properties of the package is discussed. It is shown that the package limits the performance obtained by the devices in...

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Published inProceedings of the Thirteenth Biennial University/Government/Industry Microelectronics Symposium (Cat. No.99CH36301) pp. 182 - 185
Main Authors Khandelwal, P., Chinnaswamy, K., Shenai, K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1999
Subjects
Bonding
Flanges
Heat sinks
Heat transfer
Immune system
MOSFET circuits
Packaging
Power MOSFET
Radio frequency
Temperature
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Summary:This paper presents the characterization and modeling of package parasitics of power MOSFETs used in RF applications. A detailed characterization procedure of electrical and thermal properties of the package is discussed. It is shown that the package limits the performance obtained by the devices in the RF range. Thus the RF package needs to be characterized and modeled accurately for the simulations and optimization of power MOSFET modules in RF applications.
ISBN:0780352408
9780780352407
ISSN:0749-6877
2375-5350
DOI:10.1109/UGIM.1999.782849