The growth of MQW planar buried heterostructure lasers with semi-insulating blocking layers by OMVPE

The growth of suitable semi-insulating (SI) material for buried heterostructure (BH) lasers and the material's electrical characteristics under single and double carrier injection conditions are described. The difficulty of regrowth of InP around mesas is discussed. It is necessary to grow a th...

Full description

Saved in:
Bibliographic Details
Published in[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials pp. 208 - 211
Main Authors Jowett, J.M., Moule, D.J., Wright, A.P., Briggs, A.T.R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1991
Subjects
Bandwidth
Contact resistance
Electric resistance
Electric variables
Indium phosphide
Optical materials
Power generation
Quantum well devices
Surface resistance
Threshold current
Online AccessGet full text

Cover

More Information
Summary:The growth of suitable semi-insulating (SI) material for buried heterostructure (BH) lasers and the material's electrical characteristics under single and double carrier injection conditions are described. The difficulty of regrowth of InP around mesas is discussed. It is necessary to grow a thick SI layer for maximum resistance, and to achieve a planar surface to enable electrical contact to be made to the device. Threshold currents as low as 7 mA, output powers of over 20 mW and modulation bandwidths up to 8 GHz have been measured for a laser with highly resistive planar SI layers.< >
ISBN:0879426268
9780879426262
DOI:10.1109/ICIPRM.1991.147338