Extraction of parasitic parameters of dummy devices on different silicon substrates

S-parameters of dummy devices fabricated on Si substrates with different resistivities are measured and analyzed to study the effects of substrate resistivity on the microwave characteristics. An equivalent parasitic circuit model is proposed and the extraction procedure also developed. The substrat...

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Bibliographic Details
Published in1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192) Vol. 3; pp. 1863 - 1866 vol.3
Main Authors Chen, L.P., Ho, Y.P., Lin, D.C., Tseng, B.M., Lee, H.Y., Guan, R.F., Huang, G.W., Chen, Y.C., Wen, W.Y., Chen, C.L.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1998
Subjects
Circuits
CMOS technology
Conductivity
Electrical resistance measurement
Frequency
Parasitic capacitance
Scattering parameters
Silicon
Substrates
Tin
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Summary:S-parameters of dummy devices fabricated on Si substrates with different resistivities are measured and analyzed to study the effects of substrate resistivity on the microwave characteristics. An equivalent parasitic circuit model is proposed and the extraction procedure also developed. The substrate resistivity effects can be explained well by the proposed model.
ISBN:0780344715
9780780344716
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1998.700851