Characteristics of a 1200 V PT IGBT with trench gate and local life time control
A new 1200 V IGBT with a V/sub CE/(sat) of 1.9 V at 125/spl deg/C and 140 A/cm/sup 2/ has been developed using a trench gate PT (punch-through) structure and local life time control. Compared to state-of-the-art third generation planar devices, this device represents a 30% improvement of on-state lo...
Saved in:
Published in | Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242) Vol. 2; pp. 811 - 816 vol.2 |
---|---|
Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
1998
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A new 1200 V IGBT with a V/sub CE/(sat) of 1.9 V at 125/spl deg/C and 140 A/cm/sup 2/ has been developed using a trench gate PT (punch-through) structure and local life time control. Compared to state-of-the-art third generation planar devices, this device represents a 30% improvement of on-state losses at almost twice the current density. This paper describes the structure and characteristics of this new IGBT. |
---|---|
ISBN: | 9780780349438 0780349431 |
ISSN: | 0197-2618 2576-702X |
DOI: | 10.1109/IAS.1998.730239 |