Characteristics of a 1200 V PT IGBT with trench gate and local life time control

A new 1200 V IGBT with a V/sub CE/(sat) of 1.9 V at 125/spl deg/C and 140 A/cm/sup 2/ has been developed using a trench gate PT (punch-through) structure and local life time control. Compared to state-of-the-art third generation planar devices, this device represents a 30% improvement of on-state lo...

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Bibliographic Details
Published inConference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242) Vol. 2; pp. 811 - 816 vol.2
Main Authors Motto, E.R., Donlon, J.F., Takahashi, H., Tabata, M., Iwamoto, H.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1998
Subjects
Current density
Electrodes
Insulated gate bipolar transistors
Low voltage
MOSFET circuits
Power conversion
Power semiconductor devices
Power semiconductor switches
Surface resistance
Virtual colonoscopy
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Summary:A new 1200 V IGBT with a V/sub CE/(sat) of 1.9 V at 125/spl deg/C and 140 A/cm/sup 2/ has been developed using a trench gate PT (punch-through) structure and local life time control. Compared to state-of-the-art third generation planar devices, this device represents a 30% improvement of on-state losses at almost twice the current density. This paper describes the structure and characteristics of this new IGBT.
ISBN:9780780349438
0780349431
ISSN:0197-2618
2576-702X
DOI:10.1109/IAS.1998.730239