In situ reflectance monitoring of epitaxial growth

Epitaxial growth of compound semiconductors is accomplished with MOCVD or MBE. In both these methods, many process variables must be precisely controlled to achieve the proper combination of layer thickness, chemical composition, lattice matching, and doping levels required by modern compound semico...

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Bibliographic Details
Published in2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497) pp. II19 - II20
Main Author Breiland, W.G.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2000
Subjects
Chemical compounds
Chemical processes
Epitaxial growth
Lattices
MOCVD
Molecular beam epitaxial growth
Monitoring
Reflectivity
Semiconductor device doping
Thickness control
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Summary:Epitaxial growth of compound semiconductors is accomplished with MOCVD or MBE. In both these methods, many process variables must be precisely controlled to achieve the proper combination of layer thickness, chemical composition, lattice matching, and doping levels required by modern compound semiconductor devices. We have found that a simple and robust in situ monitor, normal incidence reflectance, has proven to be an indispensable tool for achieving stringent device requirements for epitaxial growth.
ISBN:9780780362529
0780362527
ISSN:1099-4742
2376-8614
DOI:10.1109/LEOSST.2000.869714