A high gain low noise 110 GHz monolithic two-stage amplifier

A high-gain low-noise 110-GHz monolithic two-stage amplifier using 0.1- mu m pseudomorphic AlGaAs/InGaAs/GaAs low-noise HEMT (high electron mobility transistor) technology is presented. This amplifier demonstrates a small signal gain of 19.6 dB at 110 GHz with a noise figure of 3.9 dB. A noise figur...

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Bibliographic Details
Published in1993 IEEE MTT-S International Microwave Symposium Digest pp. 783 - 785 vol.2
Main Authors Wang, H., Tan, K.L., Ton, T.N., Dow, G.S., Liu, P.H., Streit, D.C., Berenz, J., Pospieszalski, M.W., Pan, S.K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1993
Subjects
Frequency
Gain
Gallium arsenide
HEMTs
Indium phosphide
Integrated circuit noise
Integrated circuit technology
Low-noise amplifiers
MMICs
Noise figure
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Summary:A high-gain low-noise 110-GHz monolithic two-stage amplifier using 0.1- mu m pseudomorphic AlGaAs/InGaAs/GaAs low-noise HEMT (high electron mobility transistor) technology is presented. This amplifier demonstrates a small signal gain of 19.6 dB at 110 GHz with a noise figure of 3.9 dB. A noise figure of 3.4 dB with 15.6 dB associated gain was obtained at 113 GHz. The superior results of this monolithic low-noise amplifier allow system applications at 110 GHz, such as radiometers and low-noise receivers.< >
ISBN:9780780312098
0780312090
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1993.276757