A selective CVD tungsten local interconnect technology

A novel local interconnect technology utilizing polysilicon strapped with selective CVD (chemical vapor deposition) tungsten (W) has been developed for advanced CMOS applications. Problems associated with etching of a local interconnect material do not exist, since the local interconnects are of pol...

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Bibliographic Details
Published inTechnical Digest., International Electron Devices Meeting pp. 450 - 453
Main Authors Lee, V.V., Verdonckt-Vandebroek, S., Wong, S.S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1988
Subjects
CMOS technology
Conductivity
Contact resistance
Etching
Hafnium
Implants
Metallization
Oxidation
Parasitic capacitance
Tungsten
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Summary:A novel local interconnect technology utilizing polysilicon strapped with selective CVD (chemical vapor deposition) tungsten (W) has been developed for advanced CMOS applications. Problems associated with etching of a local interconnect material do not exist, since the local interconnects are of polysilicon and defined at the same level as the gate electrodes. CVD W deposited on the polysilicon serves as a very attractive gate shunt and local interconnect because of its low resistivity and ability to carry a high-density current reliably. Both n- and p-channel MOSFETs have been successfully fabricated with this technology. An alternate version of this technology utilizing a second polysilicon layer for the formation of the local interconnects is also discussed.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1988.32852