A new approach for improving operating margin of unipolar ReRAM using local minimu m of reset voltage

We propose a new approach for improving the operating margin of Ta 2 O 5 /plasma oxidized TiO 2 stacked unipolar ReRAM. It was found that the reset voltage (switching from low resistance state to high resistance state) can be minimized by using local minimum against the resistance of the low resista...

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Bibliographic Details
Published in2010 Symposium on VLSI Technology pp. 87 - 88
Main Authors Sakotsubo, Y, Terai, M, Kotsuji, S, Saito, Y, Tada, M, Yabe, Y, Hada, H
Format Conference Proceeding
LanguageEnglish
Japanese
Published IEEE 01.06.2010
Subjects
Arrays
Fitting
Guidelines
non-volatile memory
Oxidation
Plasmas
Resistance
Switches
switching mechanism
switching model
tunnel barrier
Unipolar ReRAM
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Summary:We propose a new approach for improving the operating margin of Ta 2 O 5 /plasma oxidized TiO 2 stacked unipolar ReRAM. It was found that the reset voltage (switching from low resistance state to high resistance state) can be minimized by using local minimum against the resistance of the low resistance state. In addition, weakening the plasma oxidation condition reduced the power consumption and the variation of reset voltage. Excellent operating margin and more than 10 5 switching cycle times was successfully demonstrated using the integrated device.
ISBN:9781424454518
1424454514
ISSN:0743-1562
DOI:10.1109/VLSIT.2010.5556181