Characterization of SiC diodes in extremely high temperature ambient

• Published in: Twenty-First Annual IEEE Applied Power Electronics Conference and Exposition, 2006. APEC '06 p. 7 pp.
• Main Authors: Funaki, T., Kashyap, A.S., Mantooth, H.A., Balda, J.C., Barlow, F.D., Kimoto, T., Hikihara, T.
• Format: Conference Proceeding
• Language: English; Japanese
• Published: IEEE 2006
• Subjects: FETs; JFETs; Manufacturing; Packaging; Schottky diodes; Semiconductor diodes; Semiconductor materials; Silicon carbide; Temperature dependence; Voltage
• ISBN: 9780780395473; 0780395476
• ISSN: 1048-2334; 2470-6647
• DOI: 10.1109/APEC.2006.1620575

This paper discusses the static and dynamic behavior of the body diode buried in SiC JFETs and SiC Schottky barrier diodes (SBDs). The device parameters are extracted from experimental results and their temperature dependencies are discussed. There is reverse current flow from source to drain in the channel of JFETs for on condition at low temperatures. In higher temperatures, it tends to flow through the body diode due to the increase of the resistance across the channel. The dynamic characteristics indicate that the reverse recovery phenomena of the body diode in a SiC JFET deteriorates with increasing temperature. It is therefore desirable to add an external SiC SBD for improving the static and dynamic behavior for high temperature operation of SiC JFETs.