A self-aligned CoSi2interconnection and contact technology for VLSI applications

• Published in: IEEE transactions on electron devices Vol. 34; no. 3; pp. 554 - 561
• Main Authors: Van den hove, L., Wolters, R., Maex, K., De Keersmaecker, R.F., Declerck, G.J.
• Format: Journal Article
• Language: English; Japanese
• Published: IEEE 01.03.1987
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/T-ED.1987.22963

Cobalt silicide is investigated in view of possible application in a self-aligned technology. Extremely smooth, highly conductive CoSi 2 films are obtained using rapid thermal processing for silicide formation starting from deposited cobalt layers (on Si). The phase formation is studied by XRD and RBS. No lateral silicide formation is observed at contact edges. The influence of Si consumption and dopant behavior on diode performance is studied. Shallow arsenic (0.15 µm deep) and boron (0.3 µm deep) junctions are successfully silicided. Very low contact resistances are obtained between the silicide and n+ and p+ regions. MOS transistors were fabricated with CoSi 2 on the source, drain, and gate. An increase in current driving capability is noticed while no degradation of other electrical parameters due to the silicide processing steps is observed. At some critical points, comparison is made with the TiSi 2 process.