Nonvolatile 32×32 crossbar atom switch block integrated on a 65-nm CMOS platform

A 32×32-crossbar complementary-atom-switch (CAS) block has been successfully integrated in a 65nm-node CMOS platform without degrading CMOS properties. The CAS connecting to two Cu lines at each edge is composed of a dual layered electrolyte of TiO 2 /polymer, which prevents Cu oxidation during the...

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Bibliographic Details
Published in2012 Symposium on VLSI Technology (VLSIT) pp. 39 - 40
Main Authors Banno, N., Tada, M., Sakamoto, T., Okamoto, K., Miyamura, M., Iguchi, N., Nohisa, T., Hada, H.
Format Conference Proceeding
LanguageEnglish
Japanese
Published IEEE 01.06.2012
Subjects
Atom switch
BEOL device
CMOS integrated circuits
Electric fields
Electrodes
Nonvolatile programmable logic
Programming
Switches
Switching circuits
System-on-a-chip
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Summary:A 32×32-crossbar complementary-atom-switch (CAS) block has been successfully integrated in a 65nm-node CMOS platform without degrading CMOS properties. The CAS connecting to two Cu lines at each edge is composed of a dual layered electrolyte of TiO 2 /polymer, which prevents Cu oxidation during the fabrication of the switch and Cu BEOL. The reduction of Cu-surface roughness and the electric field concentration at the edge of Cu electrode enable a high I on /I off ratio and a low programming voltages of 1.8V with distribution as low as σ=0.2V.
ISBN:9781467308465
1467308463
ISSN:0743-1562
DOI:10.1109/VLSIT.2012.6242450