Light effect on the interface resistance of Ba0.8Sr0.2TiO3/LaMnO3 heterostructure

The results of the study of high conducting areas at the interface between ferroelectric and insulating oxides Ba 0.8 Sr 0.2 TiO 3 /LaMnO 3 are presented. It is shown that the electrical resistance of the heterosctructure decreases significantly with cooling and exhibits metallic behavior at low tem...

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Bibliographic Details
Published inFerroelectrics Vol. 590; no. 1; pp. 213 - 219
Main Authors Leontyev, A. V., Chibirev, A. O., Kamashev, A. A., Garif'yanov, N. N., Mamin, R. F.
Format Journal Article
LanguageEnglish
Published Philadelphia Taylor & Francis 22.06.2022
Taylor & Francis Ltd
Subjects
Electrical resistance
ferroelectric film
Ferroelectricity
Heterostructures
Infrared lasers
Lanthanum compounds
Low temperature
Magnetic fields
Magnetic properties
photoconductivity
Pulsed lasers
Time constant
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Summary:The results of the study of high conducting areas at the interface between ferroelectric and insulating oxides Ba 0.8 Sr 0.2 TiO 3 /LaMnO 3 are presented. It is shown that the electrical resistance of the heterosctructure decreases significantly with cooling and exhibits metallic behavior at low temperatures, and its properties depend on magnetic field application. Both green (514 nm) and infrared (1028 nm) pulsed laser illumination of Ba 0.8 Sr 0.2 TiO 3 /LaMnO 3 heterostructure lead to decrease in the electrical resistance. The time constant associated with the negative photoresistance effect is ∼4-15 s.
ISSN:0015-0193
1563-5112
DOI:10.1080/00150193.2022.2037973