Synopsis of L-EMCPA December 2022 issue

• Published in: IEEE journal on electromagnetic compatibility practice and applications Vol. 4; no. 4; pp. 89 - 91
• Main Authors: Watanabe, Koh, Komatsu, Misaki, Aoi, Mai, Sakai, Ryota, Tanaka, Satoshi, Nagata, Makoto, Izzo, Danilo, Vogt-Ardatjew, Robert, Leferink, Frank, Berthoud, Yoann, Duchamp, Jean-Marc, Niembro-Martin, Alejandro, Dreina, Emmanuel, Ndagijimana, Fabien, Boyer, Alexandre, Kumar, Awanish, Reddy, G. Shrikanth, Padhi, Jyotibhushan, Matthee, Alexander, Moonen, Niek
• Format: Journal Article
• Language: English
• Published: IEEE 01.12.2022
• ISSN: 2637-6423
• DOI: 10.1109/LEMCPA.2022.3221229

Wide band gap (WBG) semiconductors, such as gallium nitride (GaN), have become popular among switching power modules. In pursuing power conversion efficiency, the power module's high-speed and high-power operation leads to electromagnetic (EM) noise in a very wide frequency range, potentially interfering with nearby wireless communications [e.g., long-term evolution (LTE)]. This letter analyzes the source of EM noise from the power modules using GaN transistors in half-bridge circuits. The EM noise was clearly observed in the proximity of power modules and attributed to two primary sources in the frequency range of interest up to 6 GHz: 1) the periodical switching operation of GaN transistors in the output stage and 2) the logic operation of complementary metal-oxide-semiconductor digital circuits to control gate drivers, in the lower and upper side of frequencies, respectively. Measurements analyzed the EM noise characteristics at different probing locations over the assembly of two GaN power modules as well as in different operating conditions by strategically supplying source signals. The influence of EM noise on LTE receiver performance is evaluated with wireless system-level simulation and related to the degradation of its minimum receivable input power.