Temperature dependence of photoluminescence properties of zinc sulfide grown from aqueous solutions by mist chemical vapor deposition

Temperature dependence of photoluminescence properties of zinc sulfide (ZnS) films, which were successfully grown from aqueous solutions by using mist chemical vapor deposition method, was investigated. The samples were grown at 500-700°C. Although the excitation condition using 325nm HeCd laser was...

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Bibliographic Details
Published in2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) p. 1
Main Authors Uno, Kazuyuki, Asano, Yasuyuki, Yamasaki, Yuichiro, Tanaka, Ichiro
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2016
Subjects
Chemical vapor deposition
II-VI semiconductor materials
Photoluminescence
Sulfur
Temperature dependence
Zinc compounds
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Summary:Temperature dependence of photoluminescence properties of zinc sulfide (ZnS) films, which were successfully grown from aqueous solutions by using mist chemical vapor deposition method, was investigated. The samples were grown at 500-700°C. Although the excitation condition using 325nm HeCd laser was below-gap excitations under 80 K, strong photoluminescence (PL) emissions were observed around 450nm. Because the PL peak strength increases with increasing the growth temperature, the origin of the 450nm peak would be sulfur vacancies. The peaks have small thermal quenching properties. The ZnS film grown at 500°C has a weaker luminescence from the sulfur vacancies than the other films. Additionally, the sample shows peaks around 360nm which would be originated from zinc oxide.
DOI:10.1109/ICIPRM.2016.7528602