Low power device technology with SiGe channel, HfSiON, and poly-Si gate

• Published in: IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 pp. 161 - 164
• Main Authors: Wang, H.C.-H., Shang-Jr Chen, Ming-Fang Wang, Pang-Yen Tsai, Ching-Wei Tsai, Ta-Wei Wang, Ting, S.M., Tuo-Hung Hou, Peng-Soon Lim, Huan-Just Lin, Ying Jin, Hun-Jan Tao, Shih-Chang Chen, Diaz, C.H., Mong-Song Liang, Chenming Hu
• Format: Conference Proceeding
• Language: English
• Published: Piscataway NJ IEEE 2004
• Subjects: Applied sciences; Boron; Dielectric devices; Electrical engineering. Electrical power engineering; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Germanium silicon alloys; High K dielectric materials; High-K gate dielectrics; MOS devices; Niobium compounds; Power electronics, power supplies; Silicon germanium; Threshold voltage; Titanium compounds; Thermal stress; Voltage threshold; Semiconductor alloys; Electric stress; Hole mobility; Polycrystal; PMOS technology; Short channel; Planar doping; Durability; High voltage; Carrier lifetime; Power device; Hot carrier; High k dielectric; Low-power electronics; Reliability; NMOS technology
• ISBN: 0780386841; 9780780386846
• DOI: 10.1109/IEDM.2004.1419096

We report solutions to the formidable challenges posed by integrating a HfSiON dielectric with a poly-Si gate for low-power device technology. A 1.5 nm EOT HfSiON is demonstrated with mobility comparable to SiO/sub 2/ and 3 orders of magnitude leakage reduction. A novel boron delta-doped strained-SiGe channel points a way out of the high threshold voltage problem associated with Fermi-pinning at the high-k/poly-Si interface and ameliorates short-channel effects in PMOS devices. In addition, a 20% hole mobility enhancement and 15% I/sub on/-I/sub off/ characteristics improvement are achieved owing to the compressive SiGe channel. NMOS PBTI lifetime of 35 years, and PMOS NBTI and NMOS hot carrier lifetimes of more than 1000 years are demonstrated at 1.2 V.