Heating Device for Thermal Migration of Local Zones Through Silicon Plates with a Diameter of Up to 100 mm

The thermomigration method has unique capabilities in the technology of creating power electronics devices. To realize these possibilities, it is a necessary requirement to create a temperature gradient field with a high degree of uniformity in silicon wafers. This task becomes significantly more co...

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Bibliographic Details
Published in2024 International Conference on Industrial Engineering, Applications and Manufacturing (ICIEAM) pp. 611 - 616
Main Authors Gavrus, I. V., Yakovenko, A. A., Yatsenko, A. N.
Format Conference Proceeding
LanguageEnglish
Published IEEE 20.05.2024
Subjects
heater
Heating systems
Industrial engineering
Mathematical models
Performance evaluation
Semiconductor device modeling
Silicon
Temperature distribution
temperature gradient
thermomigration
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Summary:The thermomigration method has unique capabilities in the technology of creating power electronics devices. To realize these possibilities, it is a necessary requirement to create a temperature gradient field with a high degree of uniformity in silicon wafers. This task becomes significantly more complicated with increasing plate sizes and to date, no industrially suitable heating devices have been developed for silicon wafers with a diameter of 100 mm or more. In this paper, a heating device design is proposed and implemented that meets both the requirements of industrial use of this device and the requirements of uniformity of the temperature gradient field. Mathematical modeling of the temperature distribution in a silicon wafer with a diameter of 100 mm has been carried out. An experimental verification of the calculated data was performed. The high performance characteristics of the proposed heating device have been practically proven.
DOI:10.1109/ICIEAM60818.2024.10553675