An 82 - 98 GHz medium power amplifier in a 0.1-µm GaAs pHEMT process

An 82 to 98 GHz medium power amplifier is presented in a commercially available 0.1 µm GaAs process. The amplifier achieves greater than 20 dB gain and a measured Psat above 20 dBm across the frequency range. The maximum Psat of 22 dBm is measured at 96 GHz, corresponding to a power density of 395 m...

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Bibliographic Details
Published in2023 5th Australian Microwave Symposium (AMS) pp. 41 - 42
Main Authors Mihaljevic, Jakov, Chakraborty, Sudipta, Mahon, Simon J., Heimlich, Michael
Format Conference Proceeding
LanguageEnglish
Published IEEE 16.02.2023
Subjects
Density measurement
GaAs
Gain measurement
Gallium arsenide
PHEMTs
Power amplifier
Power amplifiers
Power measurement
Power system measurements
W-band
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Summary:An 82 to 98 GHz medium power amplifier is presented in a commercially available 0.1 µm GaAs process. The amplifier achieves greater than 20 dB gain and a measured Psat above 20 dBm across the frequency range. The maximum Psat of 22 dBm is measured at 96 GHz, corresponding to a power density of 395 mW/mm. A peak PAE of 13.3% is measured at 96 GHz.
DOI:10.1109/AMS57822.2023.10062311