A Comparison of Vertical and Lateral Devices for Transient Photocurrent Time of Flight in Amorphous Selenium and its Alloys

Understanding the properties of semiconductors for photodetection, imaging, and sensing is of extreme importance in optimizing their performance. Amorphous selenium (a-Se) has been well studied over the last several decades and is of great interest in X-ray detection, particle physics, and memory ap...

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Published in2023 IEEE Nuclear Science Symposium, Medical Imaging Conference and International Symposium on Room-Temperature Semiconductor Detectors (NSS MIC RTSD) p. 1
Main Authors Hellier, K., Gomez, R., Abbaszadeh, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 04.11.2023
Subjects
Metals
Optical device fabrication
Optical imaging
Photoconductivity
Selenium
Semiconductor detectors
X-ray detection
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Summary:Understanding the properties of semiconductors for photodetection, imaging, and sensing is of extreme importance in optimizing their performance. Amorphous selenium (a-Se) has been well studied over the last several decades and is of great interest in X-ray detection, particle physics, and memory applications. Many studies have been conducted on its alloys; however, some varieties can only be fabricated in thin film form, preventing the use of common techniques for extracting transport properties. In this work, we demonstrate that lateral devices employing optical slits may be used for transient photocurrent time of flight on thin films, allowing the calculation of mobility and opening the door for future studies of thin film selenium alloys.
ISSN:2577-0829
DOI:10.1109/NSSMICRTSD49126.2023.10338158