Conclusive Algorithm with Kink Effects for Fitting Planar MOSFET Characteristic Curves

• Published in: 2024 10th International Conference on Applied System Innovation (ICASI) pp. 338 - 339
• Main Authors: Yang, Hsin-Chia, Chi, Sung-Ching, Su, Yu-Chih, Tseng, Chun-Wei, Nguyen, Van-Hau, Cheng, Po-Hao, Chang, Kai-Chieh, Wu, Peichi
• Format: Conference Proceeding
• Language: English
• Published: IEEE 17.04.2024
• Subjects: Current measurement; Fitting; kinks; Lattices; modified formula; MOSFET; Semiconductor device modeling; Technological innovation; Vibrations
• ISSN: 2768-4156
• DOI: 10.1109/ICASI60819.2024.10547818

Conventional formulas are modified to carry out feasible curves and fit the measured current-voltage characteristic curves. Some important parameters (k N , V th , \lambda ) are deliberately determined for the fitting. Even though the fitting of I DS versus V DS is not perfect, the statistical deviations may be facilitated to see how good the fitting is. Somehow, the kink is always found as V DS is around (V GS -V th ). That is to say, the measured current, especially at the transition from the triode region to the saturation region, appears to be lower than the ones that are deduced from the modified formula. It means something associated with internal obstacles that carriers must confront. Those obstacles may be reasonably explained from the lattice vibrations due to heat. But how come it happens at the turning points around the corner between the triode region and the saturation point where the carriers reach the maximum speed prior to it. The transistor using 90nm-process technology is taken into account and the measured data is going to be fitted by using the proposed algorithms.