3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs

• Published in: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) pp. 1 - 2
• Main Authors: Lee, J.-Y., Chang, F.-S., Hsiang, K.-Y., Chen, P.-H., Luo, Z.-F., Li, Z.-X., Tsai, J.-H., Liu, C. W., Lee, M. H.
• Format: Conference Proceeding
• Language: English
• Published: JSAP 11.06.2023
• Subjects: Capacitors; Computer architecture; Extrapolation; ferroelectric; ferroelectric tunneling junction (FTJ); Microprocessors; Nonvolatile memory; Three-dimensional displays; Tunneling
• ISSN: 2158-9682
• DOI: 10.23919/VLSITechnologyandCir57934.2023.10185163

A 1500x I LRS /I HRS with a high cell current of ~100 nA/ cell (J = 83 A/cm 2 ) is achieved by antiferroelectric (AFE) vertical ferroelectric tunnel junctions (V-FTJs) that demonstrates multilevel, a self-rectifying rate > 1000x, and macro operation. The stackable 3 D architecture integrating multiple layers of AFE V-FTJs with contact optimization further increases memory density. Robust endurance > 10 9 cycles at |4V| and stable nonvolatile data retention > 10 4 sec with extrapolation to 10 years are achieved. The proposed cell contact V-FTJ by AFE is a promising pathway toward BEOL NVMs by a NAND/NOR-based framework.