Extended near infrared photo-response influenced by host matrix change in Ge nanoparticle-based films

Ge nanoparticles in SiO 2 or Si 3 N 4 on Si pieces at 500 °C were fabricated by sputtering from Ge, SiO 2 or Si 3 N 4 targets. Transmission electron microscopy, current - voltage and spectral-photocurrent characteristics were done to determine the structure and photo-electrical behaviour. Depending...

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Bibliographic Details
Published in2022 International Semiconductor Conference (CAS) pp. 231 - 234
Main Authors Stavarache, I., Palade, C., Slav, A., Prepelita, P., Teodorescu, V. S., Ciurea, M. L.
Format Conference Proceeding
LanguageEnglish
Published IEEE 12.10.2022
Subjects
Ge-NPs in SiO2 and Si3N4 films
magnetron sputtering
near infrared photo-sensitivity
photo-electric
Sensitivity
Silicon compounds
structure
Temperature
Temperature dependence
Temperature sensors
Transmission electron microscopy
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Summary:Ge nanoparticles in SiO 2 or Si 3 N 4 on Si pieces at 500 °C were fabricated by sputtering from Ge, SiO 2 or Si 3 N 4 targets. Transmission electron microscopy, current - voltage and spectral-photocurrent characteristics were done to determine the structure and photo-electrical behaviour. Depending on the temperature, the current under illumination, for both films, are comparable and increase with more than 5 orders of magnitude over the dark one. Even if obtaining parameters are similar, photo-current spectra in photovoltaic regime show for Ge:SiO 2 a cut-off wavelength of 1377 nm and an extended sensitivity threshold in near infrared of 1560 nm for Ge:Si 3 N 4 .films.
ISSN:2377-0678
DOI:10.1109/CAS56377.2022.9934586