The use of pulsed vacuum arc deposition method for making films of various materials
The pulsed vacuum arc method used for deposition of films of refractory metals, diamond-like carbon, Bi/sub 2/Te/sub 3/-based semiconductor compounds of complex composition, and multi-layer metallocarbon compositions is reported which ensures a high adhesion of films to various substrate materials....
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Published in | Proceedings ISDEIV. 18th International Symposium on Discharges and Electrical Insulation in Vacuum (Cat. No.98CH36073) Vol. 2; pp. 601 - 604 vol.2 |
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Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
Piscataway NJ
IEEE
1998
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Subjects | |
Online Access | Get full text |
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Summary: | The pulsed vacuum arc method used for deposition of films of refractory metals, diamond-like carbon, Bi/sub 2/Te/sub 3/-based semiconductor compounds of complex composition, and multi-layer metallocarbon compositions is reported which ensures a high adhesion of films to various substrate materials. It is shown that structure, phase composition and of the films depend on deposition and pulsed plasma flow generation parameters. The films are characterized by oriented growth and high degree of structural dispersion caused by high instantaneous rate of particle deposition, high density of nucleation at the initial condensation phase and high degree of ionization of plasma flow. The method allows one to vary the films structure in a broad range and obtain films with reproducible composition and properties. |
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ISBN: | 0780339533 9780780339538 |
ISSN: | 1093-2941 |
DOI: | 10.1109/DEIV.1998.738783 |