AXB6 Memristor Structures for Neuromorphic Calculations

The article proposes a new method of the formation of memristor structures based on the oxides, sulfides and selenides to perform basic arithmetic operations. Moreover, was proposed an approach to control the resistance of a memristor. The proposed schemes are characterized by simplicity, and can be...

Full description

Saved in:
Bibliographic Details
Published in2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus) pp. 2131 - 2134
Main Authors Demidov, Yury A., Pestov, Grigory N., Gamanenko, Alexandra S., Stroganov, Anton A., Belov, Alexey N.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.01.2020
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:The article proposes a new method of the formation of memristor structures based on the oxides, sulfides and selenides to perform basic arithmetic operations. Moreover, was proposed an approach to control the resistance of a memristor. The proposed schemes are characterized by simplicity, and can be compactly implemented in integral design.
ISSN:2376-6565
DOI:10.1109/EIConRus49466.2020.9039228