Microdot for transverse mode control in VCSEL
The VCSEL device with a SiN microdot of 2um in diameter and 120nm in thickness showed a very strong mode suppression of 20dB on the 0 th -order mode. The resulting spectral RMS was reduced significantly from 0.65nm to 0.47nm. Excellent PAM4 53Gbps eye diagram was obtained after 100-meter fiber trans...
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Published in | 2022 Compound Semiconductor Week (CSW) pp. 1 - 2 |
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Main Authors | , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.06.2022
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Subjects | |
Online Access | Get full text |
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Summary: | The VCSEL device with a SiN microdot of 2um in diameter and 120nm in thickness showed a very strong mode suppression of 20dB on the 0 th -order mode. The resulting spectral RMS was reduced significantly from 0.65nm to 0.47nm. Excellent PAM4 53Gbps eye diagram was obtained after 100-meter fiber transmission. |
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DOI: | 10.1109/CSW55288.2022.9930463 |