Microdot for transverse mode control in VCSEL

The VCSEL device with a SiN microdot of 2um in diameter and 120nm in thickness showed a very strong mode suppression of 20dB on the 0 th -order mode. The resulting spectral RMS was reduced significantly from 0.65nm to 0.47nm. Excellent PAM4 53Gbps eye diagram was obtained after 100-meter fiber trans...

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Bibliographic Details
Published in2022 Compound Semiconductor Week (CSW) pp. 1 - 2
Main Authors Wang, Jiaxing, Ji, Yipeng, Yang, Zhuokai, Hu, Huawen, Li, Fangzhou, Chen, Jianqiang, Shen, ChihChiang, Chang-Hasnain, Connie J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2022
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Summary:The VCSEL device with a SiN microdot of 2um in diameter and 120nm in thickness showed a very strong mode suppression of 20dB on the 0 th -order mode. The resulting spectral RMS was reduced significantly from 0.65nm to 0.47nm. Excellent PAM4 53Gbps eye diagram was obtained after 100-meter fiber transmission.
DOI:10.1109/CSW55288.2022.9930463