Ka/Q band GaAs impatt amplifier technology

GaAs IMPATT diodes are capable of generating 2 to 3 W simultaneously with 18-22% efficiency in the 33 GHz to 46 GHz frequency band. The design of the amplifier circuits which utilize these devices is discussed. The circuit design is based on a 3-step closed form algorithm. The first step is a passiv...

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Bibliographic Details
Published in1983 Eighth International Conference on Infrared and Millimeter Waves pp. 1 - 2
Main Authors Jerinic, G., Schindler, H., Cobb, M., Fines, J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.1983
Subjects
Bandwidth
Gain
Gallium arsenide
Impedance
Network analyzers
Passive circuits
Resistance
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Summary:GaAs IMPATT diodes are capable of generating 2 to 3 W simultaneously with 18-22% efficiency in the 33 GHz to 46 GHz frequency band. The design of the amplifier circuits which utilize these devices is discussed. The circuit design is based on a 3-step closed form algorithm. The first step is a passive circuit characterization with an automatic network analyzer. In the second step, a computer is used to generate diode device lines. The third step is load line synthesis for predictable operation. The resulting performance is described. 2 W over a 2-GHz bandwidth was achieved simultaneously with minimum gain of 9 dB.
ISBN:9781728120386
1728120381
DOI:10.1109/IRMM.1983.9126386