Characteristics of argon-ion-implanted amorphous-InGaZnO

We investigated electron transport properties of an argon ion (Ar+) implanted a-IGZO film on glass by Hall measurement combined with wet etching. As a result, we obtained concentration and mobility of electron as a function of depth in the a-IGZO from the surface, and high concentration area in dept...

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Published in2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) pp. 77 - 80
Main Authors Yasuta, K., Ui, T., Ikeda, T., Matsuo, D., Sakai, T., Dohi, S., Setoguchi, Y., Takahashi, E., Andoh, Y., Tatemichi, J.
Format Conference Proceeding
LanguageEnglish
Published FTFMD(International Society of Functional Thin Film Materials & Devices) 29.06.2021
Subjects
Conferences
Glass
Ions
Plasma measurements
Process control
Resistance
Wet etching
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Summary:We investigated electron transport properties of an argon ion (Ar+) implanted a-IGZO film on glass by Hall measurement combined with wet etching. As a result, we obtained concentration and mobility of electron as a function of depth in the a-IGZO from the surface, and high concentration area in depth distributed deeper compared with one of the argon plasma treated a-IGZO. In addition, we estimated the implanted Ar atom and oxygen vacancy depth-profiles in the a-IGZO. We confirmed Ar stopping powers of a-IGZO and the donor level of 0.05-0.1 eV below bottom of conduction band energy, which can be applied to resistance control technique for a-IGZO device processes.
DOI:10.23919/AM-FPD52126.2021.9499156