XPS Investigation of Si3N4/SiC Nanocomposites Prepared Using a Commercial Polymer

We have synthesized Si3N4/SiC nanocomposites using a commercial polymer. Formation behavior of SiC nanoparticles has been studied using X‐ray photoelectron spectroscopy (XPS). Based on the XPS results, we concluded that SiC nanoparticles were formed by a chemical reaction of Si provided from Si3N4 w...

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Published inJournal of the American Ceramic Society Vol. 82; no. 4; pp. 1076 - 1078
Main Authors Oh, Yoon-Suk, Cho, Woo-Seok, Kim, Chang-Sam, Lim, Dae Soon, Cheong, Deock-Soo
Format Journal Article
LanguageEnglish
Published Westerville, Ohio American Ceramics Society 01.04.1999
Blackwell
Wiley Subscription Services, Inc
Subjects
Ceramics
Cermets, ceramic and refractory composites
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Nanocomposites
Nanoscale materials and structures: fabrication and characterization
Other materials
Physics
Silicon carbide
Silicon nitride
Specific materials
X-ray photoelectron spectroscopy
Inorganic compounds
Composite materials
Synthesis
Silicon carbides
Binary compounds
Silicon nitrides
Nanostructures
Experimental study
X-ray photoelectron spectra
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Summary:We have synthesized Si3N4/SiC nanocomposites using a commercial polymer. Formation behavior of SiC nanoparticles has been studied using X‐ray photoelectron spectroscopy (XPS). Based on the XPS results, we concluded that SiC nanoparticles were formed by a chemical reaction of Si provided from Si3N4 with free carbon obtained by pyrolysis of a polymer around 1300°C. The presence of CNx compounds in samples processed in an Ar atmosphere supported our explanation.
Bibliography:ark:/67375/WNG-S4PZ6P5G-Q
istex:F4A027563A3527093AF9C82C1FF2E1CFC33BC7A4
ArticleID:JACE1076
Supported by a KIST‐2000 program from the Ministry of Science and Technology of Korea.
E. E. Boakye—contributing editor
Member, American Ceramic Society.
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1151-2916.1999.tb01879.x