High-Gain Phototransistors Based on a CVD MoS2 Monolayer

A phototransistor based on a chemical vapor deposited (CVD) MoS2 monolayer exhibits a high photoresponsivity (2200 A W−1) and an excellent photogain (5000). The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p‐dopants to MoS2, decreasing the carr...

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Bibliographic Details
Published inAdvanced materials (Weinheim) Vol. 25; no. 25; pp. 3456 - 3461
Main Authors Zhang, Wenjing, Huang, Jing-Kai, Chen, Chang-Hsiao, Chang, Yung-Huang, Cheng, Yuh-Jen, Li, Lain-Jong
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 05.07.2013
WILEY‐VCH Verlag
Subjects
ambient air
Disulfides - chemistry
Electric Conductivity
Light
Molybdenum - chemistry
molybdenum disulfides
photogain
phototransistors
Silicon - chemistry
Silicon Dioxide - chemistry
Transistors, Electronic
Volatilization
molybdenum disulfides
phototransistors
photogain
ambient air
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Summary:A phototransistor based on a chemical vapor deposited (CVD) MoS2 monolayer exhibits a high photoresponsivity (2200 A W−1) and an excellent photogain (5000). The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p‐dopants to MoS2, decreasing the carrier mobility, photoresponsivity, and photogain.
Bibliography:ark:/67375/WNG-LTCWLZQH-F
ArticleID:ADMA201301244
istex:A1E6B093BA5FD5E09D4C01829086D5C3294CDEC7
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201301244