Optical generation of electron-hole pairs in phosphor and boron co-doped Si nanocrystals in SiO2

We investigated experimentally optical generation of electron–hole pairs in layers of silicon nanocrystals co‐doped with phosphor and boron, dispersed in a solid‐state matrix of silicon dioxide. The study was performed at room temperature. From the red‐shift of the photoluminescence spectrum and the...

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Bibliographic Details
Published inPhysica status solidi. A, Applications and materials science Vol. 213; no. 11; pp. 2863 - 2866
Main Authors Chung, Nguyen Xuan, Limpens, Rens, Lesage, Arnon, Fujii, Minoru, Gregorkiewicz, Tom
Format Journal Article
LanguageEnglish
Published Weinheim Blackwell Publishing Ltd 01.11.2016
Wiley Subscription Services, Inc
Subjects
Absorption
Boron
carrier multiplication
Doping
Nanocrystals
Optical properties
optical spectroscopy
Photoluminescence
silicon
Silicon dioxide
SiO2
transient absorption
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Summary:We investigated experimentally optical generation of electron–hole pairs in layers of silicon nanocrystals co‐doped with phosphor and boron, dispersed in a solid‐state matrix of silicon dioxide. The study was performed at room temperature. From the red‐shift of the photoluminescence spectrum and the enhanced absorption at low energies appearing upon doping, the formation of additional levels inside the bandgap has been confirmed. By comparing the transient induced absorption at two excitation energies, below and well above twice the emission energy, the evidence of carrier multiplication in co‐doped silicon nanocrystals has been obtained for the first time. Effect of doping on optical characteristics of silicon nanocrystals
Bibliography:istex:7B60A487D20E50249E90065B90DDA784E0DB7042
ArticleID:PSSA201600381
ark:/67375/WNG-1BXFRNVJ-G
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201600381