A new photoreflectance signal possibly due to midgap interface states in buried F-doped SnO2/TiO2 junctions

A new optical anomaly has been found in photoreflectance spectra at temperatures above 250 K at spray-pyrolysis-deposited junctions composed of F-doped SnO2 and anatase TiO2 junctions. The energetic position of this anomaly at room temperature is considerably lower than those associated with the bul...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 59; no. SC; pp. 1 - 5
Main Authors Kobayashi, Eiichi, Shimmura, Shuhei, Ito, Seigo, Makino, Takayuki
Format Journal Article
LanguageEnglish
Published Tokyo IOP Publishing 01.02.2020
Japanese Journal of Applied Physics
Subjects
Anatase
Optical transition
Pyrolysis
Room temperature
Tin dioxide
Titanium dioxide
Valence band
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Summary:A new optical anomaly has been found in photoreflectance spectra at temperatures above 250 K at spray-pyrolysis-deposited junctions composed of F-doped SnO2 and anatase TiO2 junctions. The energetic position of this anomaly at room temperature is considerably lower than those associated with the bulk optical transitions of TiO2. Its intensity monotonically grows against the temperature rise. These experimental facts suggest that the new anomaly comes from optical transition from the valence band of TiO2 to midgap interface states.
Bibliography:JJAP-S1101127.R2
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/ab54f8