High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air

Sequential layers of the high‐k dielectric ZrO2 and the electron transporting semiconductors ZnO and Li‐doped ZnO are deposited onto conductive indium tin oxide electrodes using spray pyrolysis. With these structures, thin‐film transistors are fabricated with operating voltages below 6 V and maximum...

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Bibliographic Details
Published inAdvanced materials (Weinheim) Vol. 23; no. 16; pp. 1894 - 1898
Main Authors Adamopoulos, George, Thomas, Stuart, Wöbkenberg, Paul H., Bradley, Donal D. C., McLachlan, Martyn A., Anthopoulos, Thomas D.
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 26.04.2011
WILEY‐VCH Verlag
Subjects
Air
Boron Compounds - chemistry
Electricity
high-k dielectrics
Lithium - chemistry
oxide transistors
spray pyrolysis
Tin Compounds - chemistry
Transistors, Electronic
Zinc Oxide - chemistry
Zirconium - chemistry
ZnO
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Summary:Sequential layers of the high‐k dielectric ZrO2 and the electron transporting semiconductors ZnO and Li‐doped ZnO are deposited onto conductive indium tin oxide electrodes using spray pyrolysis. With these structures, thin‐film transistors are fabricated with operating voltages below 6 V and maximum electron mobilities on the order of 85 cm2 V−1 s−1.
Bibliography:istex:38F92DE7F1B98A75983960CF8ED2F8987E1ABE2E
ArticleID:ADMA201003935
ark:/67375/WNG-KQVGPZMG-P
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201003935