Linear electro-optic effect in ferroelectric HfO2-based epitaxial thin films

Electro-optic (EO) modulators for silicon photonics using CMOS-compatible materials and processes are in great demand. In this study, epitaxial (100)-undoped HfO2 and Y-doped HfO2 thin films were fabricated on Sn-doped In2O3/yttria-stabilized zirconia(100) substrates at room temperature via magnetro...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 60; no. 7
Main Authors Kondo, Shinya, Shimura, Reijiro, Teranishi, Takashi, Kishimoto, Akira, Nagasaki, Takanori, Funakubo, Hiroshi, Yamada, Tomoaki
Format Journal Article
LanguageEnglish
Published Tokyo IOP Publishing 01.07.2021
Japanese Journal of Applied Physics
Subjects
CMOS
Electric fields
Electro-optic effect
Ellipsometry
Ferroelectric materials
Ferroelectricity
Ferroelectrics
Hafnium oxide
HfO
Indium oxides
Magnetron sputtering
Modulation
Modulators
Pockels effect
Room temperature
Substrates
Thin films
Tin
Yttria-stabilized zirconia
Yttrium oxide
Zirconium dioxide
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Summary:Electro-optic (EO) modulators for silicon photonics using CMOS-compatible materials and processes are in great demand. In this study, epitaxial (100)-undoped HfO2 and Y-doped HfO2 thin films were fabricated on Sn-doped In2O3/yttria-stabilized zirconia(100) substrates at room temperature via magnetron sputtering. EO measurement of the Y-HfO2 film using modulation ellipsometry showed that the phase was changed by 180° after application of positive and negative poling biases, and the modulation amplitude increased linearly with increasing AC electric field, indicating a linear EO effect based on ferroelectricity. The observed results indicate that ferroelectric HfO2-based films are viable candidates for CMOS-compatible EO devices.
Bibliography:JJAP-103568
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ac087d