Growth of superconducting NdFe0.88Co0.12AsO films by metal-organic chemical vapor deposition and post arsenic diffusion

• Published in: Europhysics letters Vol. 109; no. 1; pp. 17007 - 17011
• Main Authors: Corrales-Mendoza, I., Bartolo-Pèrez, P., Sánchez-Reséndiz, V. M., Gallardo-Hernández, S., Conde-Gallardo, A.
• Format: Journal Article
• Language: English
• Published: Les Ulis EDP Sciences, IOP Publishing and Società Italiana di Fisica 01.01.2015; IOP Publishing
• Subjects: 74.70.Xa; 74.78.-w; 81.15.Gh; Arsenic; Chemical composition; Cobalt; Crystallography; Metalorganic chemical vapor deposition; Neodymium; Organic chemistry; Precursors; Secondary ion mass spectroscopy; Substrates; Superconductivity; Thin films
• ISSN: 0295-5075; 1286-4854
• DOI: 10.1209/0295-5075/109/17007

Metal-organic chemical vapor deposition (MOCVD) and post-deposition arsenic diffusion processes were successfully employed to grow superconducting NdFe0.88Co0.12AsO thin films. First, by employing iron, cobalt and neodymium metal-organic precursors, a precursor film is grown by MOCVD on (001)-oriented LaAlO3 substrates. Subsequently, the arsenic is incorporated during an annealing of these precursor films in the presence of a NdFe0.9Co0.1AsO pellet. The chemical composition and crystallographic results indicate the formation of the cobalt-doped NdFeAsO polycrystalline phase. The secondary ion mass spectroscopy indicates a homogeneous arsenic diffusion process. The resistance and magnetization measurements as a function of temperature indicate a superconducting transition .